NTE22 NTE ELECTRONICS, NTE22 Datasheet
NTE22
Manufacturer Part Number
NTE22
Description
TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),SIP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE22.pdf
(2 pages)
Features:
D High Breakdown Voltage: V
D Large I
D Good h
D Low Collector Saturation Voltage
Applications:
D Medium Power Output Stages
D High–Voltage Drivers
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Note 1. P
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Output Capacitance
Continuous
Pulse (Note 1)
W
C
FE
Capacity: I
Parameter
= 20ms, Duty Cycle = 1/2
Linearity
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AF PO, General Purpose Amp, Driver
C
C
EBO
j
= 1A DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
= 80V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
I
C
CBO
h
EBO
f
FE
T
ob
I
I
I
V
V
V
I
V
V
C
C
E
C
NTE22
CB
EB
CE
CE
CB
= 50 A
= 1mA
= 50 A
= 500A, I
= 4V
= 80V
= 3V, I
= 10V, I
= 10V, f = 1MHz
Test Conditions
C
B
C
= 50mA
= 50mA
= 50mA
Min
100
120
80
5
–
–
–
–
–
0.15
Typ
100
20
–
–
–
–
–
–
–55 to +125 C
Max
270
0.4
–
–
–
1
1
–
–
900mW
+135 C
Unit
MHz
100V
pF
V
V
V
V
80V
A
A
5V
1A
2A
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NTE22 Summary of contents
Page 1
... DC Current Gain Collector Saturation Voltage Transition Frequency Output Capacitance NTE22 Silicon NPN Transistor = 80V CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
E C .100 (2.54) .051 (1.29) .185 (4.7) B .138 (3.5) .022 (0.55) ...