NTE2357 NTE ELECTRONICS, NTE2357 Datasheet - Page 2

• Manufacturer Part Number: NTE2357
• Description: Pre-Biased "Digital" Transistor,50V V(BR)CEO,100mA I(C),TO-92var
• Manufacturer: NTE ELECTRONICS

Specifications of NTE2357

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Input OFF Voltage
Input ON Voltage
Input Resistance
Input Resistance Ratio
(Input)
Base
Parameter
R
1
R
2
NPN
Collector
(Output)
Emitter
(GND)
.050 (1.27)
.050 (1.27)
V
V
Symbol
V
(BR)CBO
(BR)CEO
R
V
V
CE(sat)
R
1
I(off)
I(on)
/R
1
Schematic Diagram
A
2
= +25 C unless otherwise specified)
.165 (4.2)
I
I
I
V
V
C
C
C
E C B
CE
CE
Max
= 10mA, I
= 10 A, I
= 100 A, R
= 5V, I
= 200mV, I
Test Conditions
C
E
B
(1.8)
.071
= 100 A
= 0
BE
= 0.5mA
(Input)
Base
C
=
= 5mA
(12.7)
(3.2)
(2.6)
.126
Max
.500
Max
.102
Max
.035 (0.9)
R
1
R
2
PNP
Min
Collector
(Output)
0.8
1.0
0.9
50
50
15
Emitter
(GND)
–
Typ
0.1
1.1
1.9
1.0
22
–
–
Max
0.3
1.5
3.0
1.1
29
–
–
Unit
k
V
V
V
V
V