NTE2409 NTE ELECTRONICS, NTE2409 Datasheet
NTE2409
Manufacturer Part Number
NTE2409
Description
BIPOLAR TRANSISTOR, PNP, -15V
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2409.pdf
(2 pages)
Specifications of NTE2409
Transistor Polarity
PNP
Power Dissipation Pd
200mW
Dc Collector Current
250mA
Dc Current Gain Hfe
50
C-e Breakdown Voltage
15V
Power (ptot)
200mW
Dc Current Gain Min (hfe)
25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Peak Emitter Current, I
Peak Base Current, I
Total Power Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Tab, R
Thermal Resistance, Tab–to–Soldering Points, R
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T
Note 2. V
Note 3. V
Collector Cutoff Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Continuous
Peak
BE
BE(sat)
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
decreases by about 2mV/K with increasing temperature.
decreases by about 1.7mV with increasing temperature.
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BM
General Purpose Amp, Surface Mount
EM
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +60 C, Note 1), P
CEX
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
(Compl to NTE2408)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
I
CE(sat)
V
CBO
BE
thJT
NTE2409
V
V
V
V
I
I
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
CB
CE
CE
= 10mA, I
= 100mA, I
tot
= 30V, I
= 30V, I
= 5V, I
= 5V, I
thTS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
E
B
= 2mA, Note 2
= 10mA, Note 2
B
= 0
= 0, T
= 0.5mA, Note 3
= 5mA, Note 3
J
= +150 C
thSA
. . . . . . . . . . . . . . . . . . . .
Min
600
–
–
–
–
–
Typ
650
250
75
1
–
–
–65 to +150 C
Max
750
820
300
650
15
4
280K/W
200mW
+150 C
100mA
200mA
200mA
200mA
60K/W
90K/W
Unit
mV
mV
mV
mV
nA
80V
80V
65V
A
5V
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NTE2409 Summary of contents
Page 1
... General Purpose Amp, Surface Mount Description: The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits. Absolute Maximum Ratings: Collector–Base Voltage, V CBO Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Capacitance Small–Signal Current Gain Noise Figure Note 3. V decreases by about 1.7mV with increasing temperature. BE(sat) B .074 (1.9) .118 (3.0) Max = +25 C ...