NTE65 NTE ELECTRONICS, NTE65 Datasheet
NTE65
Manufacturer Part Number
NTE65
Description
TRANSISTOR,BJT,NPN,15V V(BR)CEO,25MA I(C),SOT-37
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE65.pdf
(2 pages)
Specifications of NTE65
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Description:
The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal
amplifier and also used in applications requiring fast switching times.
Features:
D High Current–Gain Bandwidth Product
D Low Noise Figure
D High Power Gain
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Storage Temperature Range, T
Thremal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
DC Current Gain
Derate Above 60 C
Parameter
High Voltage, Low Noise for CATV, MATV
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +60 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
I
h
CBO
FE
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
NTE65
C
C
E
CB
CE
thJA
= 1mA, I
= 0.1mA, I
= 0.1mA, I
= 10V, I
= 10V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
B
E
C
= 0
E
C
= 0
= 14mA
= 0
= 0
Min
15
20
25
3
–
Typ
–65 to +150 C
–
–
–
–
–
2.0mW/ C
Max Unit
250
50
500 C/W
–
–
–
180mW
30mA
nA
15V
20V
V
V
V
3V
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NTE65 Summary of contents
Page 1
... High Voltage, Low Noise for CATV, MATV Description: The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal amplifier and also used in applications requiring fast switching times. Features: D High Current–Gain Bandwidth Product D Low Noise Figure ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Characteristics Current–Gain Bandwidth Product Collector–Base Capacitance Functional Tests Noise Figure Power Gain at Optimum Noise Figure Maximum Available Power Gain (Note Note 1. max 2 (I – ...