AT-42085G Avago Technologies US Inc., AT-42085G Datasheet - Page 2

• Manufacturer Part Number: AT-42085G
• Description: RF TRANSISTOR, NPN, 12V, 8GHZ 85 PLASTIC
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42085G

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 500mW
• Dc Collector Current: 80mA
• Dc Current Gain Hfe: 150
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 2dB ~ 3.5dB @ 2GHz ~ 4GHz
• Gain: 9.5dB ~ 13.5dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (85 Plastic)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1859; AT-42085G

AT-42085 Absolute Maximum Ratings
Electrical Specifications, T
Note:
1. For this test, the emitter is grounded.

Symbol
Symbol
|S
P
G
NF
G
f
h
I
I
C
CBO
EBO
T
CB
V
V
V
1 dB
FE
1 dB
A
T
1E
CBO
P
O
EBO
CEO
I
T
STG
C
T
j
|

Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameters and Test Conditions
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
A
= 25°C
O
C
; V
= 35 mA
[,3]
CE
= 8 V, I
CE
C
EB
CE
CE
= 10 mA
= 8 V, I
CB
[1]
= 1 V
= 8 V, I
CE
= 8 V, I
= 8 V
: V
= 8 V, I
CB
CE
C
= 8 V, f = 1 MHz
C
= 35 mA
C
= 8 V, I
= 35 mA
= 10 mA
Units
C
mW
mA
= 35 mA
°C
°C
V
V
V
C
= 35 mA
Maximum
-65 to 150
Absolute
f = 1.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f= 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
500
150
1.5
0
1
80
[1]
Thermal Resistance
Notes:
1. Permanent damage may occur if any of
2. Tcase = 25°C.
3. Derate at 7.7 mW/°C for Tc > 85°C.
4. See MEASUREMENTS section “Thermal
θ
jc
these limits are exceeded.
Resistance” for more information.
= 130°C/W
Units
dBm
GHz
—
dB
dB
dB
dB
µA
µA
pF
Min.
15.5
30
[2,4]
:
Typ.
17.0
11.0
0.5
0.0
14.0
13.5
0.3
150
5.0
9.5
.0
3.5
9.5
8.0
Max.
70
0.
.0