NTE106 NTE ELECTRONICS, NTE106 Datasheet - Page 2

RF TRANSISTOR, PNP, -600mV, 1.1GHZ

NTE106

Manufacturer Part Number
NTE106
Description
RF TRANSISTOR, PNP, -600mV, 1.1GHZ
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE106

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
600mV
Transition Frequency Typ Ft
1.1GHz
Power Dissipation Pd
360mW
Dc Collector Current
200mA
Dc Current Gain Hfe
120
Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
Note 2. f
ON Characteristics (Cont’d)
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Input Capacitance
Switching Characteristics
Turn–On Time
Delay Time
Rise Time
Turn–Off Time
Stoirage Time
Fall Time
Storage Time
T
is defined as the frequency at which |h
Parameter
Emitter
Symbol
V
V
300 s, Duty Cycle
.210 (5.33)
CE(sat)
C
BE(sat)
C
t
t
(12.7)
f
t
t
t
obo
on
t
off
t
ibo
Max
.500
T
d
s
s
Min
r
f
A
45
= +25 C unless otherwise specified)
I
I
I
I
I
I
I
V
V
V
I
V
I
I
C
C
C
C
C
C
C
B1
B1
C
CB
BE
CC
CC
= 1mA, I
= 10mA, I
= 50mA, I
= 1mA, I
= 10mA, I
= 50mA, I
= 10mA, V
= 10mA, I
= 1mA
= I
.041 (1.05)
= 500mV, I
= 5V, I
= 1.5V, V
= 1.5V, I
B2
fe
= 1mA
| extrapolates to unity.
Test Conditions
B
B
E
B
B
B
B
B1
.018 (0.45)
= 0.1mA
= 0.1mA
= 0, f = 140kHz
C
CE
BE
= 1mA
= 5mA, Note 1
= 1mA
= 5mA, Note 1
Base
Collector
= 10mA,
= 10mA, I
.230 (5.84) Dia Max
.195 (4.95) Dia Max
C
2%.
= 10V, f = 100MHz
= 0, I
= 0, f = 140kHz
.030 (.762) Max
C
= 10mA,
B2
= 10mA
0.75 0.86 0.90
Min
850 1100
Typ
0.7
1.1
2.0
2.0
10
16
17
5
5
8
Max Unit
0.15
0.18
0.6
0.8
1.5
3.0
3.5
15
10
15
20
20
10
20
MHz
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V

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