NTE160 NTE ELECTRONICS, NTE160 Datasheet
NTE160
Manufacturer Part Number
NTE160
Description
RF TRANSISTOR, PNP, -16V, 700MHZ, TO-72
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE160.pdf
(2 pages)
Specifications of NTE160
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
16V
Transition Frequency Typ Ft
700MHz
Power Dissipation Pd
60mW
Dc Collector Current
10mA
Dc Current Gain Hfe
50
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Description:
The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream-
plifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
Collector–Emitter Voltage, (I
Emitter–Base Voltage (I
Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
Base–Emitter Voltage
DC Current Gain
Transition Frequency
Reverse Capacitance
Noise Figure
Power Gain
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 0), V
A
= +45 C), P
B
BE
Symbol
Germanium PNP Transistor
= 0), V
RF–IF Amp, FM Mixer OSC
I
I
–C
I
V
G
h
CEO
EBO
CES
NF
stg
C
f
= 0), V
FE
BE
T
pb
EBO
re
= +25 C unless otherwise specified)
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
I
I
I
I
I
I
I
f = 800MHz
I
f = 800MHz
CES
C
C
C
C
C
C
C
C
CE
CE
EB
tot
= –2mA, V
= –5mA, V
= –2mA, V
= –5mA, V
= –2mA, V
= –2mA, V
= –2mA, V
= –2mA, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= –0.3V, I
= –20V, V
= –15V, I
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE160
thJA
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CE
CE
CE
CE
CE
CE
B
C
BE
= 0
= –10V, f = 100MHz
= –10V, f = 450kHz
= 0
= –10V
= –5V
= –10V
= –5V
= –10V, R
= –10V, R
= 0
g
L
= 60
= 2k
Min
11
–
–
–
–
–
–
–
–
–
–
–350
–400
0.23
Typ
700
50
42
14
–
–
–
5
–30 to +75 C
400 C/W max
750 C/W max
–500
–100
Max
–8
–
–
–
–
–
–
6
–
60mW
+90 C
10mA
MHz
Unit
mV
mV
pF
dB
dB
0.3V
20V
16V
A
A
A
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NTE160 Summary of contents
Page 1
... Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream- plifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage (V Collector–Emitter Voltage, (I Emitter–Base Voltage ( Collector Current Total Power Dissipation (T ...
Page 2
Min Emitter 45 .040 (1.02) .220 (5.58) Dia Max .185 (4.7) Dia Max .030 (.762) Max .018 (0.45) Base Collector Case ...