NTE295 NTE ELECTRONICS, NTE295 Datasheet
NTE295
Manufacturer Part Number
NTE295
Description
TRANSISTOR,BJT,NPN,40V V(BR)CEO,1A I(C),TO-126
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE295.pdf
(2 pages)
Specifications of NTE295
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage (R
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
DC Current Gain
Current Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Output Capacitance
Output Power
Collector Efficiency
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
EBO
= +25 C), P
= +25 C), P
CBO
CEO
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
= 150 ), V
RF Power Output, Driver
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
V
V
V
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
= +25 C unless otherwise specified)
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
C
h
C
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
P
f
FE
T
ob
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CER
NTE295
V
V
I
I
I
I
V
V
I
I
V
V
C
C
C
E
C
C
CB
EB
CE
CE
CB
CC
= 10 A, I
= 1mA, R
= 1mA, R
= 10 A, I
= 500mA, I
= 500mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 40V, I
= 4V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
= 12V, f = 27MHz, P
Test Conditions
C
C
C
E
BE
BE
E
C
= 0
= 500mA
= 0
= 0
B
B
= 0
= 50mA
= 150
=
= 50mA
= 50mA
i
= 35mW
Min
180
1.0
75
75
45
60
60
–
–
5
–
–
–
Typ
250
0.2
0.9
1.8
15
–
–
–
–
–
–
–
–
–55 to +150 C
Max
320
1.0
1.0
0.6
1.2
25
–
–
–
–
–
–
–
750mW
+150 C
Unit
1.0A
1.5A
pF
W
%
V
V
V
V
V
V
75V
75V
45V
A
A
5W
5V
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NTE295 Summary of contents
Page 1
... Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage DC Current Gain Current Gain Bandwidth Product Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Output Capacitance Output Power Collector Efficiency NTE295 Silicon NPN Transistor RF Power Output, Driver = +25 C unless otherwise specified 150 ), CER ...
Page 2
Max .450 (11.4) Max .655 (16.6) Max E C .130 (3.3) Max .175 (4.45) Max .118 (3.0) Dia .030 (.762) Dia B .090 (2.28) ...