6MBI25S-120-50 FUJI ELECTRIC, 6MBI25S-120-50 Datasheet - Page 11

• Manufacturer Part Number: 6MBI25S-120-50
• Description: 6-PACK IGBT MODULE 25A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI25S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.6V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 180W
• Rohs Compliant: Yes

1000
5000
1000
500
100
500
100
50
50
20
15
10
5
0
10
10
0
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=± 15V, Tj= 125℃
Vcc=600V, VGE=± 15V, Rg=51Ω , Tj= 25℃
ton
Vcc=600V, Ic=25A, VGE=± 15V, Tj= 25℃
toff
tr
tf
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Gate resistance : Rg [ Ω ]
10
100
100
20
30
toff
ton
tr
Eoff
tf
Eon
Err
1000
1000
40
1000
500
100
50
60
50
40
30
20
10
7
6
5
4
3
2
1
0
0
0
0
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
+VGE=15V, - VGE≦ 15V, Rg≧ 51Ω , Tj≦ 125℃
Vcc=600V, VGE=± 15V, Rg= 51Ω , Tj= 125℃
toff
200
Collector - Emitter voltage : VCE [ V ]
MS5F 6171
ton
tr
tf
Reverse bias safe operating area
10
Vcc=600V, VGE=± 15V, Rg=51Ω
Collector current : Ic [ A ]
Collector current : Ic [ A ]
10
400
20
600
20
800
30
1000
30
Eoff（ 125℃ ）
Eon（ 125℃ ）
Eon（ 25℃ ）
Eoff（ 25℃ ）
Err（ 125℃ ）
Err（ 25℃ ）
40
H04- 004- 03a
11
1200
14
1400
40
50