6MBI50U4A-120-50 FUJI ELECTRIC, 6MBI50U4A-120-50 Datasheet - Page 11

• Manufacturer Part Number: 6MBI50U4A-120-50
• Description: 6-PACK IGBT MODULE 50A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI50U4A-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.35V
• Power Dissipation Max: 275W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
20
10
1000
1000
0
100
100
10
10
10
10
Vcc=600V, VGE=±15V, RG=22Ω, Tj=25
0
Vcc=600V, Ic=50A, VGE=±15V,
Vcc=600V, Ic=50A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Gate resistance : RG [ Ω ]
Gate resistance : RG [ Ω ]
25
Collector current : Ic [ A ]
ton
100
100
50
tr
tf
Eoff
Eon
Err
ton
toff
toff
Tj=25
75
tr
tf
o
o
C
C
o
C
1000
1000
100
10
125
100
10000
8
6
4
2
0
75
50
25
1000
+VGE=15V, -VGE <= 15V, RG >= 22Ω,
0
100
0
10
0
Vcc=600V, VGE=±15V, RG=22Ω, Tj=125
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
MS5F 6201
Reverse bias safe operating area (max.)
Vcc=600V, VGE=±15V, RG=22Ω
Collector-Emitter voltage : VCE [ V ]
25
400
25
Collector current : Ic [ A ]
Collector current : Ic [ A ]
50
800
50
1200
Tj <= 125
tr
75
75
Eon(125
Eoff(125
Eon(25
Err(125
Eoff(25
Err(25
ton
toff
tf
H04-004-03a
11
o
C
o
o
14
o
o
C)
o
C
C)
C)
o
o
C)
C)
C)
1600
100
100
a