7MBP50RA-120-55 FUJI ELECTRIC, 7MBP50RA-120-55 Datasheet - Page 8

• Manufacturer Part Number: 7MBP50RA-120-55
• Description: IGBT, 7 PACK MOD, 1200V, 50A, P610
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBP50RA-120-55

• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 357W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -20°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7MBP50RA120
Brake
0.01
250
200
150
100
0.1
50
40
35
30
25
20
15
10
0.001
1
0
5
0
0
0
C o lle cto r cu rren t vs. C ollec to r-E m itte r vo lta ge
20
0.5
Transient thermal resistance
Collector-Emitter voltage : Vce (V)
Power derating for IGBT
Case Temperature : Tc (°C)
40
Pulse width :Pw (sec)
0.01
1
(per device)
60
T j= 25 °C
1.5
80
Vcc=17V
100
0.1
2
120
Vcc=15V
Vcc=13V
2.5
140
IGBT
160
1
3
100
350
300
250
200
150
100
80
60
40
20
40
35
30
25
20
15
10
50
Over current protection vs. Junction temperature
0
5
0
0
0
0
0
Collector current vs. Collector-Emitter voltage
20
200
Reversed biased safe operating area
0.5
RBSOA
(Repetitive pulse)
SCSOA
(non-repetitive pulse)
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Junction temperature : Tj(°C)
400
40
Vcc=15V,Tj
1
Tj=125°C
Vcc=15V
600
60
1.5
800
80
125°C
2
Vcc=17V
100
1000
IGBT-IPM
2.5
120
1200
Vcc=15V
Vcc=13V
1400
140
3