IXZR08N120A IXYS RF, IXZR08N120A Datasheet - Page 2
IXZR08N120A
Manufacturer Part Number
IXZR08N120A
Description
MOSFET, N, RF, ISOPLUS247
Manufacturer
IXYS RF
Datasheet
1.IXZR08N120A.pdf
(3 pages)
Specifications of IXZR08N120A
Transistor Type
RF MOSFET
Drain Source Voltage Vds
1.2kV
Continuous Drain Current Id
8A
Power Dissipation Max
3W
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
ISOPLUS247
No. Of
RoHS Compliant
No. Of Pins
3
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXZR08N120A
Manufacturer:
IXYS
Quantity:
101
IXYS RF reserves the right to chang limits, test conditions and dimensions.
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,835,592
5,034,796
5,034,796
5,381,025
5,381,025
6,731,002
6,731,002
Symbol
R
C
C
C
C
T
T
T
T
Source-Drain Diode
Symbol
I
I
V
T
S
SM
d(on)
on
d(off)
off
rr
SD
G
iss
oss
rss
stray
4,850,072
4,860,072
5,049,961
5,049,961
5,640,045
5,640,045
Test Conditions
V
f = 1 MHz
Back Metal to any Pin
V
I
R
Test Conditions
V
Repetitive; pulse width limited by
T
I
300µs, duty cycle ≤2%
D
F=
JM
GS
GS
GS
G
= 0.5 I
I
s,
= 1 Ω (External)
= 0 V, V
= 15 V, V
= 0 V
V
GS
=0 V, Pulse test, t ≤
DM
DS
DS
= 0.8 V
= 0.8 V
4,881,106
4,881,106
5,063,307
5,063,307
6,404,065
6,404,065
DSS(max)
DSS
,
Characteristic Values
(
Characteristic Values
(
T
T
J
J
4,891,686
4,891,686
5,187,117
5,187,117
6,583,505
6,583,505
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
min.
min.
1960
TBD
typ.
typ.
9.2
59
33
4,931,844
4,931,844
5,237,481
5,237,481
6,710,463
6,710,463
4
5
4
6
IXZR08N120 & IXZR08N120A/B
max.
max.
1.5
48
Z-MOS RF Power MOSFET
1
8
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Α
A
V
5,017,508
5,017,508
5,486,715
5,486,715
6,727,585
6,727,585
1 2 3
120 : 1=G, 2=D,3=S
120A: 1=G, 2=S, 3= D
120B: 1=D, 2=S, 3=G