SKM200GB126D SEMIKRON, SKM200GB126D Datasheet - Page 5

• Manufacturer Part Number: SKM200GB126D
• Description: IGBT MODULE, DUAL, 1200V
• Manufacturer: SEMIKRON

Specifications of SKM200GB126D

• Transistor Polarity: N Channel
• Dc Collector Current: 260A
• Collector Emitter Voltage Vces: 2.15V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case: RoHS Compliant
• Family/system: SEMITRANS
• Voltage (v): 1200
• Current (a): 150
• Chip-type: IGBT 3 (Trench)
• Case: SEMITRANS 3

SKM 200GB126D ...
5
Fig. 7 Typ. switching times vs. I
Fig. 9 Transient thermal impedance of IGBT
Z
Fig. 11 CAL diode forward characteristic
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
C
11-09-2006 SEN
Fig. 8 Typ. switching times vs. gate resistor R
Fig. 10 Transient thermal impedance of FWD
Z
Fig. 12 Typ. CAL diode peak reverse recovery current
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
G
© by SEMIKRON