SKM300GB12E4 SEMIKRON, SKM300GB12E4 Datasheet - Page 2
SKM300GB12E4
Manufacturer Part Number
SKM300GB12E4
Description
IGBT HALFBRIDGE MODULE 300A 1200V
Manufacturer
SEMIKRON
Datasheet
1.SKM300GB12E4.pdf
(5 pages)
Specifications of SKM300GB12E4
Module Configuration
Dual
Dc Collector Current
300A
Collector Emitter Voltage Vces
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
SEMITRANS 3
No. Of Pins
7
Svhc
No
Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
300
Chip-type
IGBT 4 (Trench)
Case
SEMITRANS 3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SKM300GB12E4
Manufacturer:
NEC
Quantity:
24 900
Part Number:
SKM300GB12E4
Manufacturer:
SEMIKRON
Quantity:
20 000
SKM300GB12E4
IGBT4 Modules
SKM300GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
• High short circuit capability, self
• Soft switching 4. Generation CAL
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
2
SEMITRANS
T
T
rel. results valid for T
coefficient
limiting to 6 x I
diode (CAL4)
c
op
= 125°C max, recomm.
= -40 ... +150°C, product
CNOM
GB
j
®
= 150°
3
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
F
RRM
CE
F
F0
rr
th(j-c)
CC'+EE'
th(c-s)
rr
s
t
= V
EC
Rev. 2 – 16.06.2009
I
V
chip
I
di/dt
V
V
terminal-chip
Conditions
per diode
per module
to heat sink M6
F
F
GE
GE
CC
= 300 A
= 300 A
off
= 0 V
= ±15 V
= 600 V
= 7300 A/µs
T
T
T
T
T
T
T
T
T
T
T
to terminals M6
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
min.
2.5
3
typ.
2.17
2.11
0.25
0.02
345
1.3
0.9
2.9
4.0
0.5
54
23
15
© by SEMIKRON
0.038
max.
2.49
2.42
0.17
325
1.5
1.1
3.3
4.4
20
5
5
Unit
K/W
K/W
mΩ
mΩ
mΩ
mΩ
Nm
Nm
Nm
µC
mJ
nH
V
V
V
V
A
g