SKM50GB12T4 SEMIKRON, SKM50GB12T4 Datasheet - Page 2
SKM50GB12T4
Manufacturer Part Number
SKM50GB12T4
Description
IGBT HALFBRIDGE MODULE 50A 1200V
Manufacturer
SEMIKRON
Datasheet
1.SKM50GB12T4.pdf
(5 pages)
Specifications of SKM50GB12T4
Module Configuration
Dual
Dc Collector Current
50A
Collector Emitter Voltage Vces
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
SEMITRANS 2
No. Of Pins
7
Svhc
No SVHC
Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
50
Chip-type
IGBT 4 Fast (Trench)
Case
SEMITRANS 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SKM50GB12T4
Manufacturer:
SEMIKRON
Quantity:
104
Part Number:
SKM50GB12T4
Manufacturer:
SEMIKRON
Quantity:
20 000
SKM50GB12T4
Fast IGBT4 Modules
SKM50GB12T4
Features
• V
• High short circuit capability, self
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
2
SEMITRANS
T
T
rel. results valid for T
coefficient
limiting to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
c
op
CE(sat)
= 125°C max, recomm.
= -40 ... +150°C, product
with positive temperature
GB
j
®
= 150°
2
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
F
RRM
CE
F
F0
rr
th(j-c)
CC'+EE'
th(c-s)
rr
s
t
= V
EC
Rev. 2 – 16.06.2009
I
V
chip
I
di/dt
V
V
terminal-chip
Conditions
per diode
per module
to heat sink M6
F
F
GE
GE
CC
= 50 A
= 50 A
off
= 0 V
= ±15 V
= 600 V
= 1380 A/µs
T
T
T
T
T
T
T
T
T
T
T
to terminals M5
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
min.
2.5
3
typ.
2.22
2.18
18.4
25.6
0.65
0.04
1.3
0.9
8.7
3.8
35
1
© by SEMIKRON
max.
2.54
20.8
28.0
0.84
0.05
160
2.5
1.5
1.1
30
5
5
Unit
K/W
K/W
mΩ
mΩ
mΩ
mΩ
Nm
Nm
Nm
µC
mJ
nH
V
V
V
V
A
g