SQD23N06-31L-GE3 Vishay, SQD23N06-31L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD23N06-31L-GE3
• Description: MOSFET,N CH,W DIODE,60V,23A,TO-252
• Manufacturer: Vishay

Specifications of SQD23N06-31L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.024ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 60V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 37W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.031 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

SQD23N06-31L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.25
0.20
0.15
0.10
0.05
2.5
2.1
1.7
1.3
0.9
0.5
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
I
D
= 15 A
2
V
0
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
75
6
V
100
GS
A
80
76
72
68
64
60
= 10 V
T
- 50
= 25 °C, unless otherwise noted)
T
J
125
J
= 150 °C
= 25 °C
8
On-Resistance vs. Junction Temperature
- 25
I
D
150
= 1 mA
175
0
10
T
J
- Junction Temperature (°C)
25
50
75
100
0.001
- 0.6
- 0.3
- 0.9
- 1.2
0.01
100
0.6
0.3
0.1
10
125
0
1
- 50
0
150
- 25
Source Drain Diode Forward Voltage
0.2
175
V
T
0
SD
J
= 150 °C
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
25
T
J
- Temperature (°C)
50
0.6
S10-1998-Rev. A, 20-Sep-10
75
Document Number: 68869
I
D
0.8
= 250 μA
100
T
J
= 25 °C
125
I
D
= 5 mA
1.0
150
175
1.2