SQM40N10-30-GE3 Vishay, SQM40N10-30-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQM40N10-30-GE3
• Description: MOSFET,N CH,W DIODE,100V,40A,TO-263
• Manufacturer: Vishay

Specifications of SQM40N10-30-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.023ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 107W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 64716
S10-2103-Rev. B, 27-Sep-10
5000
4000
3000
2000
1000
125
100
75
60
45
30
15
75
50
25
0
0
0
0
0
0
T
C
C
= 25 °C
oss
T
C
20
12
2
= - 55 °C
V
V
C
DS
DS
rss
Output Characteristics
C
V
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
Transconductance
iss
GS
I
C
D
= 125 °C
Capacitance
= 10 V thru 6 V
- Drain Current (A)
40
24
4
V
GS
60
36
6
= 5 V
V
A
GS
= 25 °C, unless otherwise noted)
48
80
= 4 V
8
100
10
60
0.10
0.08
0.06
0.04
0.02
75
60
45
30
15
10
0
8
6
4
2
0
0
0
0
0
I
T
D
On-Resistance vs. Drain Current
C
10
15
= 40 A
2
= 125 °C
V
T
GS
Transfer Characteristics
C
Q
= 25 °C
- Gate-to-Source Voltage (V)
g
V
I
- Total Gate Charge (nC)
D
GS
V
- Drain Current (A)
Gate Charge
DS
20
30
4
= 6 V
= 50 V
SQM40N10-30
Vishay Siliconix
T
C
= - 55 °C
30
45
6
V
www.vishay.com
GS
40
60
8
= 10 V
10
50
75
3