SQM40N15-38-GE3 Vishay, SQM40N15-38-GE3 Datasheet

no-image

SQM40N15-38-GE3

Manufacturer Part Number
SQM40N15-38-GE3
Description
MOSFET,N CH,W DIODE,150V,40A,TO-263
Manufacturer
Vishay
Datasheet

Specifications of SQM40N15-38-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.027ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
166W
Rohs Compliant
Yes
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 65269
S10-2000-Rev. B, 13-Sep-10
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
DS(on)
(A)
(V)
(Ω) at V
(Ω) at V
G
Top View
TO-263
GS
GS
D
= 10 V
= 6 V
S
b
N-Channel 150 V (D-S) 175 °C MOSFET
b
G
N-Channel MOSFET
a
Single
0.038
0.040
C
150
40
= 25 °C, unless otherwise noted)
D
S
PCB Mount
T
T
L = 0.1 mH
T
T
Automotive
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
c
TO-263
SQM40N15-38-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Automotive Grade Product
Definition
Requirements at:
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
thJC
DM
thJA
I
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
www.vishay.com/applications
d
- 55 to + 175
LIMIT
LIMIT
± 20
150
100
166
0.9
40
23
80
80
40
55
40
SQM40N15-38
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
A
A
V
1

Related parts for SQM40N15-38-GE3

SQM40N15-38-GE3 Summary of contents

Page 1

... TrenchFET 0.040 • Package with Low Thermal Resistance 40 • AEC-Q101 Qualified Single • Compliant to RoHS Directive 2002/95/EC D • Find out more about Vishay’s Automotive Grade Product Requirements at N-Channel MOSFET TO-263 SQM40N15-38-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 °C ...

Page 2

... SQM40N15-38 Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance b Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... C i 2000 1000 Drain-to- ource Voltage (V) D Capacitance Document Number: 65269 S10-2000-Rev. B, 13-Sep- °C, unless otherwise noted 0.10 0.08 0.06 0.04 0. 100 SQM40N15-38 Vishay Siliconix ° 125 ° ° ate-to- ource Voltage (V) Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current ...

Page 4

... SQM40N15-38 Vishay Siliconix TYPICAL CHARACTERISTICS (T 3 2.5 2.0 1.5 1.0 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.20 0.16 0.12 0.08 0. ate-to- ource Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted) A 100 0.1 0.01 0.001 100 125 150 175 0 0.7 0 ...

Page 5

... Limited DM 100 Limited DS(on 0 °C C Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area - uare Wave Pul e Duration ( ) Normalized Thermal Transient Impedance, Junction-to-Ambient SQM40N15-38 Vishay Siliconix 100 µ 100 ms 100 1000 is specified 10 100 www.vishay.com 1000 5 ...

Page 6

... SQM40N15-38 Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords