VND7NV04-E STMicroelectronics, VND7NV04-E Datasheet - Page 24

• Manufacturer Part Number: VND7NV04-E
• Description: MOSFET N-CH 40V 6A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND7NV04-E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: 5V
• Operating Temperature Range: -55°C To +150°C
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 9A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package and PCB thermal data
4.3
Note:
24/37
Table 6.
DPAK thermal data
Figure 44. DPAK PC board
Layout condition of R
thickness=2 mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8 cm2).
Figure 45. R
RTH j_amb (ºC/W)
SOT-223 thermal parameter (continued)
thj-amb
Area/island (cm
90
80
70
60
50
40
30
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
0
th
vs PCB copper area in open box free air condition
and Z
th
Doc ID 7383 Rev 3
measurements (PCB FR4 area=60 mm x 60 mm, PCB
2
)
2
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
PCB CU heatsink area (cm^2)
4
6
Footprint
9.00E-04
3.00E-02
1000
0.16
0.5
8
10
2
2