10WT10FNTR Vishay, 10WT10FNTR Datasheet - Page 3

• Manufacturer Part Number: 10WT10FNTR
• Description: Schottky - D-PAK-e3
• Manufacturer: Vishay

Specifications of 10WT10FNTR

• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 10 A
• Max Surge Current: 610 A
• Configuration: Single Dual Anode
• Forward Voltage Drop: 0.89 V at 20 A
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK (TO-252AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94647
Revision: 04-Jan-11
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
1
0.2
T
J
0.01
= 175 °C
0.4
0.1
10
0.00001
V
1
FM
0.6
- Forward Voltage Drop (V)
T
0.8
J
= 25 °C
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T
J
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1.0
= 125 °C
(thermal resistance)
Single pulse
1.2
0.0001
Fig. 4 - Maximum Thermal Impedance Z
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1.4
1000
100
10
1.6
0
High Performance Schottky
t
1
1.8
- Rectangular Pulse Duration (s)
Generation 5.0, 10 A
20
0.001
V
R
- Reverse Voltage (V)
40
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
60
0.0001
0.01
0.001
0.01
100
thJC
0.1
10
80
1
VS-10UT10, VS-10WT10FN
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0
Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
100
20
175 °C
V
R
- Reverse Voltage (V)
125 °C
150 °C
Reverse Voltage
0.1
Vishay Semiconductors
100 °C
40
50 °C
75 °C
60
25 °C
80
1
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100
3