1N4148-P-TAP Vishay, 1N4148-P-TAP Datasheet - Page 2

• Manufacturer Part Number: 1N4148-P-TAP
• Description: SWITCHING DIODE GENPURP DO35-e2
• Manufacturer: Vishay

Specifications of 1N4148-P-TAP

• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 2 A
• Configuration: Single
• Recovery Time: 8 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Package / Case: DO-35-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1N4148-P
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
amb
amb
Figure 1. Forward Voltage vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9169
94 9170-1
Figure 2. Forward Current vs. Forward Voltage
1000
Parameter
100
0.1
1.2
1.0
0.8
0.6
0.4
0.2
10
1
0
- 30
0
1N4148-P
T
0.4
j
0
- Junction Temperature (°C)
V
F
[e-mail], [e-mail],
- Forward Voltage (V)
0.8
30
For technical questions within your region, please contact one of the following:
I
F
V
Scattering Limit
0.1 mA
= 100 mA
R
1.2
60
I
= 0, f = 1 MHz, V
F
i
I
R
V
R
V
= I
I
T
HF
F
R
= 0.1 x I
= 100 µA, t
j
= 25 °C
R
= 10 mA, V
= 20 V, T
Test condition
= 2 V, f = 100 MHz
= 10 mA, i
90
1.6
I
t
V
V
p
F
10 mA
R
R
= 0.3 ms
= 10 mA
1 m A
R
= 20 V
= 75 V
, R
120
j
2.0
p
= 150 °C
/T = 0.01,
L
R
R
= 100 Ω
HF
= 6 V,
= 1 mA
= 50 mV
Symbol
V
C
V
(BR)
I
I
I
η
t
t
R
R
R
rr
rr
F
D
r
94 9098
1000
Figure 3. Reverse Current vs. Reverse Voltage
100
10
1
[e-mail]
1
T
Scattering Limit
j
Min.
= 25 °C
100
45
V
R
- Reverse Voltage (V)
Typ.
10
Document Number 81873
1000
Max.
25
50
5
4
8
4
Rev. 1.1, 17-Aug-10
100
Unit
mV
nA
µA
µA
pF
ns
ns
%
V