2KBP10M/51 Vishay, 2KBP10M/51 Datasheet - Page 3

• Manufacturer Part Number: 2KBP10M/51
• Description: 2A,1000V,GLASS,IN-LINE BRIDGE
• Manufacturer: Vishay

Specifications of 2KBP10M/51

• Rohs Compliant: NO
• Voltage - Peak Reverse (max): 1000V
• Current - Dc Forward (if): 2A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (KBPM)
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1kV
• Rms Voltage (max): 700V
• Peak Non-repetitive Surge Current (max): 60A
• Avg. Forward Curr (max): 2@Ta=55CA
• Rev Curr: 5uA
• Forward Voltage: 1.1V
• Package Type: Case KBPM
• Operating Temp Range: -55C to 165C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: 2KBP10M; 2KBP10M; 2KBP10M/1; 2KBP10M/1; 2KBP10M/1GI; 2KBP10M/1GI; 2KBP10M/51GI

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88532
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.2
Instantaneous Forward Voltage (V)
20
0.4
40
0.6
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For technical questions within your region, please contact one of the following:
T
T
T
0.8
T
Pulse Width = 300 µs
1 % Duty Cycle
J
J
J
60
J
= 25 °C
= 125 °C
= 100 °C
= 25 °C
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
2KBP005M thru 2KBP10M, 3N253 thru 3N259
1.2
(15.2)
0.60
MIN.
100
1.4
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3