B250C1000G-E4/51 Vishay, B250C1000G-E4/51 Datasheet - Page 3

• Manufacturer Part Number: B250C1000G-E4/51
• Description: 1A,400V,GPP,SIN PHASE BRIDGE
• Manufacturer: Vishay

Specifications of B250C1000G-E4/51

• Voltage - Peak Reverse (max): 400V
• Current - Dc Forward (if): 1A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: WOG
• Product: Single Phase Bridge
• Peak Reverse Voltage: 400 V
• Maximum Rms Reverse Voltage: 250 V
• Max Surge Current: 45 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 125 C
• Length: 9.86 mm
• Width: 8.84 mm
• Height: 5.6 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88500
Revision: 15-Apr-08
Figure 3. Maximum Non-Repetitive Peak Forward Surge
0.01
100
0.1
50
40
30
20
10
10
Figure 4. Typical Forward Characteristics Per Diode
0
1
0.4
1
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 50 Hz
Current Per Diode
0.8
[e-mail], [e-mail], [e-mail]
T
10 ms Single Half Sine-Wave
J
For technical questions within your region, please contact one of the following:
10
= 125 °C
1.0
1.2
0.220 (5.6)
0.160 (4.1)
0.308 (7.82)
0.348 (8.84)
0.032 (0.81)
0.028 (0.71)
100
1.4
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.180 (4.6)
B40C1000G thru B380C1000G
1.0 (25.4) MIN.
0.01
100
0.1
10
Figure 5. Typical Reverse Characteristics Per Diode
10
0.220 (5.6)
0.180 (4.6)
1
1
Figure 6. Typical Junction Capacitance Per Diode
0.060 (1.52)
0.020 (0.51)
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
Reverse Voltage (V)
1
40
T
T
J
J
= 100 °C
= 25 °C
60
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
80
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100
100
3