BYM11-200-E3/96 Vishay, BYM11-200-E3/96 Datasheet - Page 3

• Manufacturer Part Number: BYM11-200-E3/96
• Description: 1A,200V,150NS,SUPERECT MELF
• Manufacturer: Vishay

Specifications of BYM11-200-E3/96

• Voltage - Forward (vf) (max) @ If: 1.3V @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, Melf
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1.3V
• Reverse Recovery Time Trr Max: 150ns
• Forward Surge Current Ifsm Max: 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number 88547
26-Jun-06
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
0.1
10
0.1
10
1
1
0.4
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
1st band denotes type and positive end (cathode)
0.6
Instantaneous Forward Voltage (V)
20
SOLDERABLE ENDS
1st BAND
0.022 (0.56)
0.018 (0.46)
0.8
40
0.205 (5.2)
0.185(4.7)
DO-213AB
D2
1.0
BYM11-50 thru BYM11-1000, RGL41A thru RGL41M
T
Pulse Width = 300 µs
1 % Duty Cycle
j
= 25 °C
T
j
T
= 100 °C
60
j
= 25 °C
1.2
80
D2 = D1
1.4
D1 =
0.105
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
- 0.008 (0.20)
+ 0
100
1.6
0.049 MIN
(1.25) MIN
100
100
0.1
10
10
1
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Mounted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.1
0.138 MAX
0.238 (6.0)
(3.5) MAX
t - Pulse Duration (s)
Reverse Voltage (V)
REF
10
1
T
f = 1.0 MHz
V
j
sig
= 25 °C
10
= 50 mVp-p
0.118 MIN
(3.0) MIN
www.vishay.com
100
100
3