CM100DY-34A Powerex Inc, CM100DY-34A Datasheet - Page 2

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CM100DY-34A

Manufacturer Part Number
CM100DY-34A
Description
IGBT MODULE A-SERIES DUAL DP 1700 100
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM100DY-34A

Rohs Compliant
YES
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 100A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
24.7nF @ 10V
Power - Max
960W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Voltage
1700V
Current
100A
Circuit Configuration
Dual
Recommended Gate Driver
VLA500K-01R
Interface Circuit Ref Design
BG2A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM100DY-34A
Manufacturer:
FAIRCHILD
Quantity:
1 000
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100DY-34A
Dual IGBTMOD™ A-Series Module
100 Amperes/1700 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T C = 108°C)*
Peak Collector Current (Pulse Repetition)*
Maximum Collector Dissipation (T C = 25°C, T j ≤ 150°C)*
Emitter Current (T C = 25°C)
Peak Emitter Current (Pulse Repetition)*
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Static Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (T C ), and heatsink temperature (T f ) measured point is just under the chips.
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
4
2
2
V CE(sat)
V GE(th)
Symbol
Symbol
V EC *
t d(on)
t d(off)
I GES
I CES
C oes
C res
Q rr *
C ies
t rr *
Q G
t r
t f
1
1
1
2,
*
4
V CC = 1000V, I C = 100A, V GE = 15V
I C = 100A, V GE = 15V, T j = 125°C*
I C = 100A, V GE = 15V, T j = 25°C*
V GE1 = V GE2 = 15V, R G = 4.8Ω,
V CC = 1000V, I C = 100A,
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 10mA, V CE = 10V
I E = 100A, V GE = 0V*
V CE = 10V, V GE = 0V
Switching Operation,
Inductive Load
Test Conditions
Test Conditions
I E = 100A
Symbol
V GES
V CES
3
I EM *
V ISO
T stg
I CM
I E *
P C
I C
T j
1
1
3
3
Min.
Min.
5.5
CM100DY-34A
–40 to 150
–40 to 125
1700
3500
±20
100
200
960
100
200
310
30
40
2.45
Typ.
Typ.
670
2.2
7.0
10
Max.
Max.
200
150
550
350
300
2.0
8.5
2.8
3.0
1.0
24.7
2.8
0.53
01/10 Rev. 1
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf

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