CM100RX-24A Powerex Inc, CM100RX-24A Datasheet - Page 3

• Manufacturer Part Number: CM100RX-24A
• Description: IGBT MODULE NX-SERIES 7-PAC DP 1200 100
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM100RX-24A

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 17.5nF @ 10V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM100RX-24A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/1200 Volts
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage*
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
Rev. 11/08
C
, T
f
measured point is just under the chips.
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
R
V
R
V
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
th(j-c)
R
I
I
C
GE(th)
C
C
d(on)
d(off)
V
GES
CES
Q
Qrr
th(j-f)
R
t
Gint
oes
t
EC
ies
res
t
rr
G
r
f
G
Q
D
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
16.9
23.9
27.6
34.6
0
j
j
IGBT
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Inductive Load Switching Operation
V
CC
FWDi
I
I
C
I
I
E
C
E
= 600V, I
Thermal Grease Applied
35
36
= 100A, V
V
I
= 100A, V
R
= 100A, V
= 100A, V
C
I
V
U
CC
E
U
34
P
V
V
G
CE
P
I
= 100A, V
NTC Thermistor
C
33 32 31 30 29 28 27 26 25 24 23 22
= 100A, V
GE
CE
1
U
= 3.0Ω, I
U
Test Conditions
= 600V, I
N
= 10mA, V
V
N
= 10V, V
Test Conditions
T
GE
Per FWDi
= V
Per IGBT
= V
C
V
C
V
P
P
GE
GE
= 25°C
= 100A, V
CES
GES
GE
GE
= ±15V,
2
V
V
N
N
GE
GE
= 15V, T
E
= 0V, T
C
= 0V, T
= 15V, T
GE
, V
, V
= 100A,
Dimensions in mm (Tolerance: ±1mm)
CE
= 100A,
= 15V, Chip
= 0V, Chip
21 20 19 18 17 16 15 14 13
GE
CE
3
= 0V
W
W
P
= 10V
P
GE
= 0V
= 0V
j
W
j
W
j
= 125°C
j
= 125°C
N
N
= 25°C
= 25°C
= 15V
4
Th
Br
Br
12
11
10
9
8
7
6
5
0
21.3
26.8
40.0
Min.
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
3
0.015
2.16
Typ.
500
Typ.
2.0
2.2
1.9
2.6
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
7
5
0
Max.
Max.
0.34
0.29
17.5
100
300
600
150
0.5
2.6
3.4
0.2
1.0
1.5
—
—
—
70
—
—
—
—
—
31
8
°C/W
°C/W
°C/W
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Units
mA
µA
nF
nF
nF
nC
µC
ns
ns
ns
ns
ns
Ω
Ω
3