CM1200HA-24J Powerex Inc, CM1200HA-24J Datasheet - Page 2

• Manufacturer Part Number: CM1200HA-24J
• Description: TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2kV V(BR)CES,1.2kA I(C)
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM1200HA-24J

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 1200A
• Current - Collector (ic) (max): 1200A
• Current - Collector Cutoff (max): 6mA
• Input Capacitance (cies) @ Vce: 200nF @ 10V
• Power - Max: 5800W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM1200HA-24J
Single IGBTMOD™ H-Series Module
1200 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current** (T
Maximum Collector Dissipation (T
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Mounting Torque G(E) Terminal M4
Module Weight (Typical)
Isolation Voltage, Main Terminal to Base Plate, AC 1 Min.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter Current Voltage**
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance
* Pulse width and repetition rate should be such that device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
c
c
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
j
150 C)
150 C)
c
= 25 C) (T
j
= 25 C unless otherwise specified
j
j
= 25 C unless otherwise specified
R
V
R
< 150 C)
V
Symbol
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
th(j-c)
I
I
C
GE(th)
C
V
C
d(on)
d(off)
CES
GES
th(c-f)
Q
j
Q
t
oes
EC
res
t
t
ies
rr
= 25 C unless otherwise specified
r
G
f
rr
Q
R
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
j
I
C
CC
) does not exceed T
C
I
I
E
E
= 1200A, V
= 1200A, V
= 600V, I
Load Switching Operation
= 1200A, di
= 1200A, di
V
I
V
V
C
CC
I
V
R
E
V
CE
GE
= 120mA, V
GE
G
GE1
= 1200A, V
= 600V, I
Test Conditions
Test Conditions
Test Conditions
= V
= V
= 3.3 , Resistive
= 0V, V
Per FWDi
Per IGBT
C
= V
GE
CES
CES
GE
= 1200A, V
j(max)
E
E
GE2
/dt = –2400A/ s
/dt = –2400A/ s
= 15V, T
= 15V, T
, V
, V
CE
C
CE
GE
rating.
GE
CE
= 1200A,
= 15V,
= 10V
= 10V
= 0V
= 0V
= 0V
j
j
GE
= 125 C
= 25 C
Symbol
V
V
T
V
I
I
CES
GES
CM
P
EM
= 15V
T
I
I
stg
–
–
–
–
C
iso
E
c
j
Min.
Min.
Min.
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CM1200HA-24J
–40 to +150
–40 to +125
2400*
2400*
1200
1200
1200
5800
1600
2500
95
15
5000
26
20
Typ.
Typ.
Typ.
6.0
2.4
2.5
9.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.022
0.050
0.018
1800
1200
1500
Max.
Max.
Max.
0.5
7.5
3.1
3.7
200
600
300
6
–
–
–
70
40
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
in-lb
Units
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C