CM1400E3U-24NF Powerex Inc, CM1400E3U-24NF Datasheet - Page 3

• Manufacturer Part Number: CM1400E3U-24NF
• Description: IGBT MODULE NF-SERIES CHOPPER DP 1200 1400
• Manufacturer: Powerex Inc
• Type: IGBTr

Specifications of CM1400E3U-24NF

• Distributorinventory: View
• Voltage: 1200V
• Current: 1400A
• Circuit Configuration: Chopper, Buck, Boost
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA500-01
• Recommended Dc To Dc Converter: VLA500-01
• Interface Circuit Ref Design: BG2A-NF

CM1400E3U-24NF
Mega Power Chopper IGBTMOD™
1400 Amperes/1200 Volts
Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
(Without Lead Resistance)
Module Lead Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Times
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage**
External Gate Resistance
Clamp Diode Characteristics, T
Characteristics
Emitter-Collector Voltage
(without Lead Resistance)
Reverse Recovery Time
Reverse Recovery Charge
* Pulse width and repetition rate should be such that the device junction temperature (T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
09/08
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25°C unless otherwise specified
j
= 25°C unless otherwise specified
R
R
V
R
R
V
Symbol
Symbol
Symbol
R
R
(Chip)
(Chip)
th(j-c')
th(j-c')
CE(sat)
t
t
th(j-c)
th(j-c)
I
C
I
GE(th)
C
C
V
V
d(on)
d(off)
CES
GES
(lead)
th(c-f)
Q
R
Q
Q
t
t
oes
FM
res
t
t
EC
ies
rr
rr
G
r
f
G
rr
rr
Q
D
Q
D
j
= 25°C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
T
C
V
Per IGBT 1/2 Module, T
I
I
C
CC
Reference Point per Outline Drawing
C
T
T
Per Clamp Diode 1/2 Module,
= 1400A, V
I
I
Per Clamp Diode 1/2 Module,
C
C
= 1400A, V
F
R
F
= 600V, I
I
Point per Outline Drawing
V
C
G
Reference Point Under Chip
Reference Point Under Chip
=1400A, Clamp Diode Part
=1400A, Clamp Diode Part
I
V
V
C
CC
Per IGBT 1/2 Module,
V
= 1400A, Terminal-Chip
CE
GE
V
I
= 0.22Ω, Inductive Load
Switching Operation
E
CE
= 140mA, V
GE1
= 100A, V
= 600V, I
Test Conditions
= V
= V
= 10V, V
Test Conditions
I
Test Conditions
C
E
= V
GE
CES
GES
GE
= 1400A, V
= 100A
j
) does not exceed T
GE2
= 15V, T
= 15V, T
, V
, V
C
GE
GE
CE
GE
CE
= 1400A,
= 15V,
= 0V
C
= 10V
= 0V
= 0V
= 0V
Reference
j
j
GE
= 125°C
= 25°C
= 15V
j(max)
rating.
Min.
Min.
Min.
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.22
–
–
–
–
–
–
–
–
7200
90
90
Typ.
Typ.
Typ.
–
7
–
2.0
0.286
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.016
1.8
0.032
0.053
0.014
0.023
Max.
1000
Max.
Max.
220
800
300
300
700
700
2.5
4.7
3.0
2.2
3.2
1.5
25
1
8
–
–
–
–
–
–
Units
Units
Units
°C/W
°C/W
°C/W
°C/W
°C/W
Volts
Volts
Volts
Volts
Volts
mΩ
mA
μA
nC
μC
μC
nF
nF
nF
ns
ns
ns
ns
ns
ns
Ω
3