CM600HB-24A Powerex Inc, CM600HB-24A Datasheet - Page 2

• Manufacturer Part Number: CM600HB-24A
• Description: IGBT Power Module
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM600HB-24A

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 105nF @ 10V
• Power - Max: 3670W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM600HB-24A
Single IGBTMOD™ A-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T C = 80°C)*
Peak Collector Current (Pulse, Repetitive)*
Maximum Collector Dissipation (T C = 25°C)*
Emitter Current (T C = 25°C)
Peak Emitter Current (Pulse, Repetitive)*
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 G(E) Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Static Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (T C ), and heatsink temperature (T f ) measured point is just under the chips.
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
4
2
2
2,
*
V CE(sat)
4
V GE(th)
Symbol
Symbol
V EC *
t d(on)
t d(off)
I GES
I CES
C oes
C res
Q rr *
C ies
t rr *
Q G
t r
t f
1
1
1
I C = 600A, V GE = 15V, T j = 125°C*
V CC = 600V, I C = 600A, V GE = 15V
I C = 600A, V GE = 15V, T j = 25°C*
V GE1 = V GE2 = 15V, R G = 0.52Ω,
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
V CC = 600V, I C = 600A,
I C = 60mA, V CE = 10V
I E = 600A, V GE = 0V*
V CE = 10V, V GE = 0V
Switching Operation,
Inductive Load
Test Conditions
Test Conditions
I E = 600A
Symbol
V GES
V CES
I EM *
3
V ISO
T stg
I CM
I E *
P C
I C
—
—
—
—
T j
1
1
3
3
Min.
Min.
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM600HB-24A
–40 to 150
–40 to 125
1200
1200
3670
1200
2500
±20
600
600
560
95
26
13
3000
19.0
Typ.
Typ.
2.1
2.4
7.0
—
—
—
—
—
—
—
—
—
—
—
Max.
Max.
105
660
190
700
350
250
8.0
3.0
3.8
1.0
1.5
—
—
—
9
2.0
01/10 Rev. 1
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf