CM75RL-24NF Powerex Inc, CM75RL-24NF Datasheet - Page 3

• Manufacturer Part Number: CM75RL-24NF
• Description: IGBT Power Module
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM75RL-24NF

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 11.5nF @ 10V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 75A
• Circuit Configuration: 7-Pac
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015 x3.5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CM75RL-24NF
Six IGBTMOD™ + Brake NF-Series Module
75 Amperes/1200 Volts
10/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage*
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance
External Gate Resistance
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
C
, T
f
measured point is just under the chips.
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
R
R
V
V
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
th(j-c)
I
I
C
GE(th)
C
C
d(on)
V
d(off)
CES
GES
th(c-f)
Q
Qrr
R
oes
t
t
EC
ies
res
t
rr
r
f
G
G
Q
D
j
j
= 25°C unless otherwise specified
Per 1/6 Module, Thermal Grease Applied
= 25°C unless otherwise specified
Inductive Load Switching Operation
V
CC
I
C
I
C
= 600V, I
= 75A, V
V
Per FWDi 1/6 Module
V
Per IGBT 1/6 Module
= 75A, V
R
V
CC
V
V
I
CE
G
GE1
C
CE
GE
I
E
Test Conditions
= 4.2Ω, I
= 7.5mA, V
= 600V, I
= 10V, V
Test Conditions
= 75A, V
= V
= V
= V
C
GE
GE
CES
GES
= 75A, V
GE2
= 15V, T
= 15V, T
E
GE
C
, V
, V
GE
CE
= 15V,
= 75A,
= 75A,
GE
CE
= 0V
= 0V
= 10V
GE
= 0V
= 0V
j
j
= 125°C
= 25°C
= 15V
Min.
Min.
4.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
338
Typ.
Typ.
2.1
2.4
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
0.085
Max.
0.23
Max.
0.24
0.36
11.5
300
350
120
100
0.5
3.0
3.8
1.0
1.0
—
50
63
—
—
8
°C/W
°C/W
°C/W
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf
Ω
3