DF01SA-E3/45 Vishay, DF01SA-E3/45 Datasheet - Page 3

1A,100V,GPP,SMDIP,BRIDGERECT

DF01SA-E3/45

Manufacturer Part Number
DF01SA-E3/45
Description
1A,100V,GPP,SMDIP,BRIDGERECT
Manufacturer
Vishay
Datasheet

Specifications of DF01SA-E3/45

Voltage - Peak Reverse (max)
100V
Current - Dc Forward (if)
1A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
4-SMD (DFS)
Product
Single Phase Bridge
Peak Reverse Voltage
100 V
Maximum Rms Reverse Voltage
70 V
Max Surge Current
30 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
100V
Rms Voltage (max)
70V
Peak Non-repetitive Surge Current (max)
30A
Avg. Forward Curr (max)
1@Ta=40CA
Rev Curr
5uA
Forward Voltage
1.1V
Package Type
Case DFS
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Surface Mount
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Other names
DF01SA-E3/77
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88574
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
J
= 125 °C
0.320 (8.13)
0.335 (8.51)
T
0.205 (5.2)
0.195 (5.0)
J
0.8
40
= 50 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
Case Style DFS
1.0
60
45°
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.013 (0.330)
0.01
0.003 (0.076)
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
DF005SA thru DF10SA
0.1
Mounting Pad La yout
Reverse Voltage (V)
t - Heating Time (s)
0.205 (5.2)
0.195 (5.0)
10
1
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3

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