EDF1DS/45 Vishay, EDF1DS/45 Datasheet - Page 3

• Manufacturer Part Number: EDF1DS/45
• Description: BRIDGE RECTIFIER,1-PHASE FULL-WAVE,200V V(RRM),SO
• Manufacturer: Vishay

Specifications of EDF1DS/45

• Rohs Compliant: NO
• Lead Free Status: Contains lead
• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 1A
• Diode Type: Single Phase
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (DFS)
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 200V
• Rms Voltage (max): 140V
• Peak Non-repetitive Surge Current (max): 50A
• Avg. Forward Curr (max): 1@Ta=40CA
• Rev Curr: 5uA
• Forward Voltage: 1.05V
• Package Type: Case DFS
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Not Compliant
• Other names: EDF1DS; EDF1DS

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88578
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
0.320 (8.13)
0.335 (8.51)
T
T
0.205 (5.2)
0.195 (5.0)
J
J
0.8
40
= 125 °C
= 25 °C
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T
Pulse Width = 300 µs
1 % Duty Cycle
1.0
Case Style DFS
J
60
45°
= 25 °C
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
30
25
20
15
10
0
5
Figure 5. Typical Junction Capacitance Per Diode
0.013 (0.330)
0.003 (0.076)
0.1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
EDF1AS thru EDF1DS
1
Mounting Pad La yout
Reverse Voltage (V)
0.205 (5.2)
0.195 (5.0)
10
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
100
= 25 °C
= 50 mVp-p
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1000
3