G3SBA60/1 Vishay, G3SBA60/1 Datasheet - Page 3

• Manufacturer Part Number: G3SBA60/1
• Description: Diode
• Manufacturer: Vishay

Specifications of G3SBA60/1

• Diode Type: Bridge Rectifier
• Peak Reflow Compatible (260 C): No
• Current Rating: 4A
• Leaded Process Compatible: No
• Forward Voltage: 1V
• Forward Current If: 4A
• Package / Case: GBU
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 600V
• Rms Voltage (max): 420V
• Peak Non-repetitive Surge Current (max): 80A
• Avg. Forward Curr (max): 2.3A
• Rev Curr: 5uA
• Package Type: Case GBU
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88606
Revision: 15-Dec-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.8
20
T
A
T
1.2
= 125 °C
40
A
0.020 R (TYP.)
= 25 °C
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0.100 (2.54)
0.085 (2.16)
0.310 (7.9)
0.290 (7.4)
0.065 (1.65)
0.085 (2.16)
For technical questions within your region, please contact one of the following:
1.6
60
0.080 (2.03)
0.065(1.65)
Polarity shown on front side of case, positive lead by beveled corner
2.0
80
0.880 (22.3)
0.860 (21.8)
0.190 (4.83)
0.210 (5.33)
100
2.4
0.160 (4.1)
0.140 (3.5)
(1.9) R
0.075
.
Case Style GBU
0.043 (1.10)
0.035 (0.90)
0.125 (3.2) x 45°
0.060 (1.52)
0.080 (2.03)
Chamfer
G3SBA20, G3SBA60 & G3SBA80
100
100
0.1
0.740 (18.8)
0.720 (18.3)
10
10
0.710 (18.0)
0.690 (17.5)
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
0.140 (3.56)
0.130 (3.30)
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
0.022 (0.56)
0.018 (0.46)
0.085 (2.16)
0.075 (1.90)
5° TYP.
9° TYP.
1
10
10
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100
100
3