GBL01-E3/45 Vishay, GBL01-E3/45 Datasheet - Page 3
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GBL01-E3/45
Manufacturer Part Number
GBL01-E3/45
Description
4A,100V,GPP,INLINE BRIDGE
Manufacturer
Vishay
Datasheet
1.GBL005-E345.pdf
(4 pages)
Specifications of GBL01-E3/45
Voltage - Peak Reverse (max)
100V
Current - Dc Forward (if)
3A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (GBL)
Product
Single Phase Bridge
Peak Reverse Voltage
100 V
Maximum Rms Reverse Voltage
70 V
Max Surge Current
150 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
20.9 mm
Width
3.56 mm
Height
10.7 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
100V
Rms Voltage (max)
70V
Peak Non-repetitive Surge Current (max)
150A
Avg. Forward Curr (max)
4A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case GBL
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88609
Revision: 30-Apr-08
Figure 3. Typical Forward Voltage Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
50 - 400 V
60 - 1000 V
20
0.8
40
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
1.0
For technical questions within your region, please contact one of the following:
T
A
T
Pulse Width = 300 µs
1 % Duty Cycle
60
0.125 (3.17) x 45°
J
= 125 °C
= 25 °C
1.2
Chamfer
0.040 (1.02)
0.030 (0.76)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
0.050 (1.27)
0.040 (1.02)
T
Polarity shown on front side of case, positive lead beveled corner
0.080 (2.03)
0.060 (1.50)
A
80
= 25 °C
1.4
100
1.6
Case Type GBL
0.026 (0.66)
0.020 (0.51)
0.210 (5.3)
0.190 (4.8)
0.825 (20.9)
0.815 (20.7)
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0.022 (0.56)
0.018 (0.46)
Lead Depth
Vishay General Semiconductor
0.098 (2.5)
0.075 (1.9)
0.140 (3.56)
0.128 (3.25)
50 - 400 V
600 - 1000 V
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
0.1
GBL005 thru GBL10
Reverse Voltage (V)
t - Heating Time (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3