GBPC102/1 Vishay, GBPC102/1 Datasheet - Page 3

Diode

GBPC102/1

Manufacturer Part Number
GBPC102/1
Description
Diode
Manufacturer
Vishay
Datasheet

Specifications of GBPC102/1

Diode Type
Bridge Rectifier
Peak Reflow Compatible (260 C)
No
Current Rating
3A
Leaded Process Compatible
No
Forward Current If
3A
Package / Case
GBPC
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
200V
Rms Voltage (max)
140V
Peak Non-repetitive Surge Current (max)
60A
Avg. Forward Curr (max)
2A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case GBPC1
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Screw
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88611
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
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1.0
60
1.2
T
T
J
J
Polarity shown on side of case: Positive lead by beveled corner
80
= 125 °C
= 25 °C
Hole For #6 Screw
1.4
0.630 (16.00)
0.590 (14.98)
0.158 (4.01)
0.142 (3.61)
0.032 (0.81)
0.028 (0.71)
0.200 (5.08)
0.160 (4.06)
0.128 (3.25)
0.048 (1.22)
100
1.6
DIA.
DIA.
Case Style GBPC1
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
AC
0.040 (1.02) TYP.
AC
0.094 (2.4) x 45°
Figure 6. Typical Transient Thermal Impedance Per Diode
100
100
0.1
0.445 (11.30)
0.405 (10.29)
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0.750 (19.05)
GBPC1005 thru GBPC110
Vishay General Semiconductor
MIN.
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
www.vishay.com
100
100
3

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