GI2401-E3/45 Vishay, GI2401-E3/45 Datasheet - Page 3

• Manufacturer Part Number: GI2401-E3/45
• Description: 16A,50V,35NS,DUAL UF RECT
• Manufacturer: Vishay

Specifications of GI2401-E3/45

• Voltage - Forward (vf) (max) @ If: 975mV @ 8A
• Current - Reverse Leakage @ Vr: 50µA @ 50V
• Current - Average Rectified (io) (per Diode): 16A
• Voltage - Dc Reverse (vr) (max): 50V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 50 V
• Forward Voltage Drop: 0.975 V at 8 A
• Recovery Time: 35 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 125 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88624
Revision: 30-Aug-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.2
0
Percent of Rated Peak Reverse Voltage (%)
0.4
Instantaneous Forward Voltage (V)
20
T
J
0.6
= 125 °C
40
0.8
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For technical questions within your region, please contact one of the following:
Pulse Width = 300 µs
1 % Duty Cycle
T
0.160 (4.06)
0.140 (3.56)
1.0
J
60
0.057 (1.45)
0.045 (1.14)
= 125 °C
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
T
J
1.2
= 25 °C
T
T
J
J
0.415 (10.54) MAX.
80
= 100 °C
= 25 °C
1.4
0.370 (9.40)
0.360 (9.14)
1
PIN
2
100
1.6
3
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.635 (16.13)
0.625 (15.87)
0.113 (2.87)
0.103 (2.62)
0.154 (3.91)
0.148 (3.74)
TO-220AB
1.148 (29.16)
1.118 (28.40)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.022 (0.56)
0.014 (0.36)
1000
100
0.560 (14.22)
0.530 (13.46)
10
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
Reverse Voltage (V)
1
GI2401 thru GI2404
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3