HFA135NH40PBF Vishay, HFA135NH40PBF Datasheet

400V 135A HEXFRED D-67 Half-Pak

HFA135NH40PBF

Manufacturer Part Number
HFA135NH40PBF
Description
400V 135A HEXFRED D-67 Half-Pak
Manufacturer
Vishay
Series
HEXFRED®r
Datasheets

Specifications of HFA135NH40PBF

Voltage - Forward (vf) (max) @ If
2V @ 270A
Current - Reverse Leakage @ Vr
3mA @ 400V
Current - Average Rectified (io) (per Diode)
275A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
120ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
Single
Mounting Type
Chassis Mount
Package / Case
D-67 HALF-PAK
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
2 V at 270 A
Recovery Time
120 ns
Forward Continuous Current
275 A
Max Surge Current
900 A
Reverse Current Ir
3000 uA
Mounting Style
Screw
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HFA135NH40PBF
Manufacturer:
Vishay Semiconductors
Quantity:
10
Document Number: 94050
Revision: 01-Aug-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage
temperature range
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
F
I
F(DC)
(maximum)
HALF-PAK (D-67)
V
R
at T
C
Ultrafast Soft Recovery Diode, 275 A
SYMBOL
SYMBOL
T
J
I
E
V
V
For technical questions, contact: ind-modules@vishay.com
138 A at 100 °C
I
FSM
, T
V
P
C
L
RM
I
AS
BR
FM
F
S
Lug terminal
R
D
T
Stg
cathode
anode
Base
275 A
400 V
J
T
T
Limited by junction temperature
L = 100 µH, duty cycle limited by maximum T
T
T
I
I
I
I
T
V
From top of terminal hole to mounting plane
R
F
F
F
= 25 °C unless otherwise specified)
C
C
C
C
J
R
= 135 A
= 270 A
= 135 A, T
= 100 µA
= 125 °C, V
= 25 °C
= 100 °C
= 25 °C
= 100 °C
= 200 V
HEXFRED
TEST CONDITIONS
TEST CONDITIONS
J
= 125 °C
R
= 400 V
FEATURES
• Very low Q
• Lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
HEXFRED
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
®
See fig. 1
See fig. 2
See fig. 3
®
rr
diodes are optimized to reduce losses and
and t
Vishay High Power Products
rr
J
MIN.
400
-
-
-
-
-
-
- 55 to + 150
HFA135NH40PbF
VALUES
400
275
138
900
463
185
1.4
TYP.
1.06
0.96
280
1.2
6.0
-
-
MAX.
1.65
1.58
380
2.0
3
-
-
www.vishay.com
UNITS
mJ
°C
W
V
A
UNITS
RoHS
COMPLIANT
mA
nH
pF
V
1

Related parts for HFA135NH40PBF

HFA135NH40PBF Summary of contents

Page 1

... 125 ° 400 200 From top of terminal hole to mounting plane S For technical questions, contact: ind-modules@vishay.com HFA135NH40PbF Vishay High Power Products and ® diodes are optimized to reduce losses and VALUES UNITS 400 275 138 900 1.4 J 463 185 - 150 MIN. ...

Page 2

... HFA135NH40PbF Vishay High Power Products DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL Reverse recovery time t rr See fig. 5 Peak recovery current I RRM See fig. 6 Reverse recovery charge Q See fig. 7 Peak rate of recovery current dI (rec)M See fig. 8 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage ...

Page 3

... T = 150 ° 125 ° °C J 2.2 2.7 3.2 = 125 ° °C J 300 400 100 1000 For technical questions, contact: ind-modules@vishay.com HFA135NH40PbF Vishay High Power Products 160 140 120 100 100 150 200 250 300 Forward Current (A) F(AV) Fig Maximum Allowable Case Temperature vs. DC ...

Page 4

... HFA135NH40PbF Vishay High Power Products 6000 T = 125 ° °C J 5000 I = 200 A 4000 135 3000 2000 1000 0 100 dI /dt (A/µs) F Fig Typical Stored Charge vs 0.1 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 Fig Maximum Thermal Impedance Z www.vishay.com 4 ® HEXFRED Ultrafast Soft Recovery ...

Page 5

... I RRM RRM Fig Reverse Recovery Waveform and Definitions High-speed switch Freewheel + diode Fig Avalanche Test Circuit and Waveforms For technical questions, contact: ind-modules@vishay.com HFA135NH40PbF Vishay High Power Products b ( 0.5 I RRM (5) dI /dt (rec)M RRM ...

Page 6

... HFA135NH40PbF Vishay High Power Products ORDERING INFORMATION TABLE Device code Dimensions www.vishay.com 6 ® HEXFRED Ultrafast Soft Recovery Diode, 275 A HFA 135 ® HEXFRED family 2 - Average current rating Not isolated HALF-PAK 5 - Voltage rating (400 Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords