HSMP-481B-TR1 Avago Technologies US Inc., HSMP-481B-TR1 Datasheet - Page 2

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HSMP-481B-TR1

Manufacturer Part Number
HSMP-481B-TR1
Description
PIN DIODE,SINGLE,100V V(BR),SOT-323
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSMP-481B-TR1

Rohs Compliant
NO
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
100V
Current - Max
1A
Capacitance @ Vr, F
0.4pF @ 50V, 1MHz
Resistance @ If, F
3 Ohm @ 100mA, 100MHz
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
2. T
Electrical Specifications T
Conventional Diodes
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Notes:
1. Package marking code is white.
2. Package laser marked.
Symbol Parameter
Number
Number
HSMP-
HSMP-
I
P
T
T
θ
the device.
contact is made to the circuit board.
Test Conditions
Part
381B
381C
381E
381F
3810
3812
3813
3814
481B
Test Conditions
Part
4810
f
jc
IV
j
stg
C
= +25°C, where T
Forward Current (1 µs Pulse) Amp
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
Marking
Package
Package
Marking
Code
Code
E0
E2
E3
E4
E0
E2
E3
E4
EB
EB
[1]
[1]
[1]
[1]
[2]
[2]
[2]
[2]
C
Code Configuration
Lead
Code Configuration
is defined to be the temperature at the package pins where
Lead
B
B
B
C
E
F
0
2
3
4
[1]
[2]
[2]
Single
Series
Common Anode
Common Cathode
Single
Series
Common Anode
Common Cathode
Dual Cathode
Dual Cathode
°C/W
Unit
°C
°C
V
C
[1]
= +25°C (Each Diode)
T
C
Same as V
Breakdown
Breakdown
Minimum
-65 to 150
I
Minimum
I
V
= +25°C
Measure
SOT-23
Voltage
V
R
V
Measure
R
Voltage
V
R
BR
R
≤ 10 µA
BR
≤ 10 µA
150
500
100
100
= V
= V
1
(V)
(V)
BR
BR
BR
Resistance Capacitance Resistance
f = 100 MHz
I
Resistance Capacitance Capacitance Inductance
I
Maximum
F
Maximum
F
R
= 100 mA
R
Series
= 100 mA
Total
T
S
3.0
3.0
(Ω)
(Ω)
Same as V
SOT-323
-65 to 150
150
150
1
Maximum
f = 1 MHz
V
f = 1 MHz
C
V
C
Typical
R
BR
Total
R
Total
T
T
0.35
0.35
= 50 V
= 50 V
(pF)
(pF)
I
f = 100 MHz
R
Minimum
Maximum
f = 1 MHz
V
C
R
V
= 0.01 mA
R
Total
High
T
R
H
1500
2
= 50 V
0.4
= 0 V
(pF)
(Ω)
f = 500 MHz –
Resistance
f= 100 MHz
Maximum
I
F
L
Typical
R
= 20 mA
Total
T
3 GHz
Low
L
10
1.0
(nH)
(Ω)

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