IRF5Y3315CM International Rectifier, IRF5Y3315CM Datasheet

MOSFET

IRF5Y3315CM

Manufacturer Part Number
IRF5Y3315CM
Description
MOSFET
Manufacturer
International Rectifier
Datasheet

Specifications of IRF5Y3315CM

Transistor Polarity
N Channel
Peak Reflow Compatible (260 C)
No
Current Rating
18A
Leaded Process Compatible
No
Mounting Type
Through Hole
Voltage Rating
150V
Package / Case
TO-257AA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Product Summary
Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
HEXFET
THRU-HOLE (TO-257AA)
* Current is limited by package
I D @ V GS = 10V, T C = 100°C Continuous Drain Current
I D @ V GS = 10V, T C = 25°C
www.irf.com
Part Number
IRF5Y3315CM
P D @ T C = 25°C
T STG
dv/dt
V GS
E AS
E AR
I DM
I AR
T J
®
POWER MOSFET
BV DSS
150V
®
Parameter
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
power MOSFETs from
R
0.085
DS(on)
18A*
I
D
300 (0.063in./1.6mm from case for 10sec)
Features:
n
n
n
n
n
n
n
Low R
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
DS(on)
4.3 (Typical)
-55 to 150
150V, N-CHANNEL
TO-257AA
±20
IRF5Y3315CM
18*
0.6
7.5
3.0
12
72
75
94
12
PD - 94268
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
C
g
6/22/01
1

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IRF5Y3315CM Summary of contents

Page 1

... I DS(on) D 0.085 18A* Features: n Low R n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight 300 (0.063in./1.6mm from case for 10sec 94268 IRF5Y3315CM 150V, N-CHANNEL TO-257AA DS(on) Units 18 0.6 W/°C ± 7.5 mJ 3.0 V/ns ...

Page 2

... IRF5Y3315CM Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Q g Total Gate Charge ...

Page 3

... BOTTOM 10 ° 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 ° 1.5 1.0 0.5 = 50V 15 0.0 8.0 9.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF5Y3315CM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V  20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 18A  V ...

Page 4

... IRF5Y3315CM  3000 1MHz iss rss gd 2500 oss 2000 C iss 1500  C oss 1000  C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100  ° 150 ° 0.1 0.4 0.8 1.2 1.6 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF5Y3315CM D.U. µ d(off ...

Page 6

... IRF5Y3315CM 20V .01 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 200 150 100 + Starting T , Junction Temperature ( Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit ...

Page 7

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ƒ 18A, di/dt 140 150V 150°C „ Pulse width 300 s; Duty Cycle Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/01 IRF5Y3315CM 2% TAC Fax: (310) 252-7903 7 ...

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