IRF9510STRR Vishay, IRF9510STRR Datasheet - Page 3

• Manufacturer Part Number: IRF9510STRR
• Description: -100V Single P-Channel HEXFET Power MOSFET In A D2-Pak Package
• Manufacturer: Vishay

Specifications of IRF9510STRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91073
S10-1728-Rev. B, 02-Aug-10
91073_01
91071_02
Fig. 2 - Typical Output Characteristics, T
10
10
Fig. 1 - Typical Output Characteristics, T
10
10
1
0
10
1
0
10
Top
Bottom
0
Top
Bottom
0
- V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
- 15 V
- 10 V
V
DS
DS ,
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
150 °C
C
- 4.5 V
= 175 °C
4.5 V
C
= 25 °C
91073_03
91071_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
Fig. 3 - Typical Transfer Characteristics
- 60 - 40 - 20 0
4
I
V
D
GS
= 8.0 A
= 10 V
IRF9510S, SiHF9510S
- V
5
GS ,
T
J ,
25
Gate-to-Source Voltage (V)
Junction Temperature (°C)
°
6
C
20 40 60 80 100 120 140 160
7
175
Vishay Siliconix
°
C
20 µs Pulse Width
V
DS
8
=
- 50 V
www.vishay.com
9
10
3