IRLR8203 International Rectifier, IRLR8203 Datasheet - Page 7
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IRLR8203
Manufacturer Part Number
IRLR8203
Description
MOSFET
Manufacturer
International Rectifier
Specifications of IRLR8203
Thermal Resistance
1.09°C/W
Gate-to-drain Charge
17nC
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Drain Source On Resistance @ 10v
6.8mohm
Current Rating
110A
Drain Source On Resistance @ 4.5v
9mohm
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
®
D =
-
Power MOSFETs
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
IRLR/U8203
V
DD
*
7