IRLR8203 International Rectifier, IRLR8203 Datasheet - Page 2
![MOSFET](/photos/22/6/220671/3770246_sml.jpg)
IRLR8203
Manufacturer Part Number
IRLR8203
Description
MOSFET
Manufacturer
International Rectifier
Specifications of IRLR8203
Thermal Resistance
1.09°C/W
Gate-to-drain Charge
17nC
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Drain Source On Resistance @ 10v
6.8mohm
Current Rating
110A
Drain Source On Resistance @ 4.5v
9mohm
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLR8203
Manufacturer:
IR
Quantity:
120 000
Company:
Part Number:
IRLR8203
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRLR8203
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLR8203PBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRLR8203PBF
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRLR8203TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLR8203TRR
Manufacturer:
IR
Quantity:
3 000
Diode Characteristics
IRLR/U8203
Dynamic @ T
Avalanche Characteristics
Static @ T
V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
Symbol
E
I
V
Symbol
I
I
t
Q
t
Q
I
I
d(on)
d(off)
AR
DSS
r
f
S
SM
rr
rr
GSS
V
2
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
oss
rr
rr
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
Min. Typ. Max. Units
30
35
–––
–––
––– 0.75
––– 0.65 –––
–––
–––
–––
–––
0.027
2430 –––
1200 –––
–––
–––
–––
–––
–––
––– -200
–––
250
–––
–––
5.6
7.1
5.7
33
17
23
15
99
30
69
48
62
49
67
110
–––
–––
100
200
–––
–––
–––
–––
–––
–––
120
100
3.0
8.5
1.3
20
50
25
34
6.8
9.0
72
92
74
V/°C
m
µA
nA
nC
ns
pF
nC
nC
ns
ns
V
V
S
A
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
D
integral reverse
Reference to 25°C, I
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
GS
GS
DS
J
J
J
J
G
= 12A
= 12A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 6.8
= V
= 24V, V
= 24V, V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 15V, I
= 24V
= 4.5V
= 0V, V
= 15V
= 4.5V
= 0V
= 15V
GS
, I
D
S
F
DS
D
D
D
Conditions
= 250µA
D
GS
GS
S
F
Conditions
Conditions
= 12A, V
= 12A, V
= 250µA
= 15A
= 12A
= 12A
= 12A, V
= 12A, V
= 10V
Max.
= 0V, T
310
= 0V
30
www.irf.com
D
GS
R
= 1mA
=15V
J
GS
R
=15V
= 125°C
= 0V
G
= 0V
Units
mJ
A
D
S