MG200Q2YS60A Powerex Inc, MG200Q2YS60A Datasheet - Page 6

• Manufacturer Part Number: MG200Q2YS60A
• Description: IGBT MODULE COMPACT DP 1200 200
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of MG200Q2YS60A

• Rohs Compliant: YES
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 15nF @ 10V
• Power - Max: 2000W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 200A
• Circuit Configuration: Dual
• Recommended Gate Driver: VLA500
• Interface Circuit Ref Design: BG2A-NF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
MG200Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
200 Amperes/1200 Volts
10
10
10
10
10
10
10
10
10
10
10
10
-1
-2
-3
-4
3
2
1
3
2
1
0
0
10
0
0
-3
COLLECTOR-EMITTER VOLTAGE, V
SINGLE PULSE
STANDARD VALUE = R
T
V
R
T
C
j
GE
G
IMPEDANCE CHARACTERISTICS
≤ 125°C
= 25°C
= 10Ω
EMITTER CURRENT, I
= ±15V
REVERSE RECOVERY TIME
SAFE OPERATION AREA
400
10
50
TRANSIENT THERMAL
-2
REVERSE BIAS
(TYPICAL)
(TYPICAL)
TIME, (s)
(IGBT)
100
800
10
-1
th(j-c)
E
V
V
R
, (AMPERES)
CC
GE
G
Q = 0.062°C/W
= 10Ω
1200
= 600V
= ±15V
150
T
T
10
CE
j
j
= 25°C
= 125°C
, (VOLTS)
0
1600
200
10
1
1000
10
800
600
400
200
10
10
10
10
10
10
10
-1
0
-1
-2
-3
-4
1
0
0
10
0
0
-3
SINGLE PULSE
STANDARD VALUE = R
I
R
T
T
COLLECTOR-EMITTER VOLTAGE VS.
C
C
j
L
= 25C
= 200A
IMPEDANCE CHARACTERISTICS
= 3Ω
= 25°C
REVERSE RECOVERY LOSS VS.
EMITTER CURRENT, I
500
10
50
TRANSIENT THERMAL
FORWARD CURRENT
GATE CHARGE, Q
-2
GATE CHARGE
(TYPICAL)
(TYPICAL)
TIME, (s)
(FWDi)
1000
100
10
-1
th(j-c)
E
V
V
R
, (AMPERES)
G
CC
GE
G
, (nC)
D = 0.136°C/W
= 10Ω
1500
150
= 600V
= ±15V
10
T
T
j
j
= 25°C
= 125°C
0
2000
200
10
1
10
10
10
10
20
16
12
8
4
0
5
4
3
2
10
0
-2
COLLECTOR-EMITTER VOLTAGE, V
I
R
T
400V
V
f = 1MHz
T
C
j
L
GE
C
= 25C
= 200A
COLLECTOR-EMITTER VOLTAGE
= 3Ω
= 25°C
GATE-EMITTER VOLTAGE VS.
200V
= 0V
10
500
600V
GATE CHARGE, Q
-1
CAPACITANCE VS.
GATE CHARGE
V
CE
(TYPICAL)
(TYPICAL)
= 0V
1000
10
0
G
, (nC)
1500
10
CE
C
C
C
1
, (VOLTS)
res
ies
oes
2000
10
2
5/05