MG300Q2YS60A Powerex Inc, MG300Q2YS60A Datasheet - Page 6

• Manufacturer Part Number: MG300Q2YS60A
• Description: IGBT MODULE COMPACT DP 1200 300
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of MG300Q2YS60A

• Rohs Compliant: YES
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 21nF @ 10V
• Power - Max: 2800W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 300A
• Circuit Configuration: Dual
• Recommended Gate Driver: VLA500
• Interface Circuit Ref Design: BG2A-NF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
MG300Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
300 Amperes/1200 Volts
10
10
10
10
10
10
10
10
10
10
10
10
-1
-2
-3
-4
3
2
1
3
2
1
0
0
10
0
0
-3
COLLECTOR-EMITTER VOLTAGE, V
SINGLE PULSE
STANDARD VALUE = R
T
V
R
T
C
j
GE
G
IMPEDANCE CHARACTERISTICS
≤ 125°C
= 25°C
50
= 6.8Ω
EMITTER CURRENT, I
= ±15V
REVERSE RECOVERY TIME
SAFE OPERATION AREA
400
10
TRANSIENT THERMAL
-2
100
REVERSE BIAS
(TYPICAL)
(TYPICAL)
TIME, (s)
(IGBT)
150
800
10
-1
th(j-c)
E
V
V
R
, (AMPERES)
200
CC
GE
G
Q = 0.044°C/W
= 6.8Ω
1200
= 600V
= ±15V
T
T
10
CE
j
j
= 25°C
= 125°C
, (VOLTS)
0
250
1600
300
10
1
1000
10
800
600
400
200
10
10
10
10
10
10
10
10
-1
0
-1
-2
-3
-4
2
1
0
0
10
0
0
-3
I
R
T
T
SINGLE PULSE
STANDARD VALUE = R
COLLECTOR-EMITTER VOLTAGE VS.
C
j
C
L
= 25C
= 300A
IMPEDANCE CHARACTERISTICS
= 2Ω
= 25°C
REVERSE RECOVERY LOSS VS.
50
EMITTER CURRENT, I
500
10
TRANSIENT THERMAL
FORWARD CURRENT
GATE CHARGE, Q
-2
100
GATE CHARGE
1000
(TYPICAL)
(TYPICAL)
TIME, (s)
(FWDi)
150
10
-1
1500
th(j-c)
V
V
R
E
, (AMPERES)
CC
GE
G
200
G
, (nC)
D = 0.068°C/W
= 6.8Ω
= 600V
= ±15V
T
T
10
j
j
2000
= 25°C
= 125°C
0
250
2500
300
10
1
10
10
10
10
20
16
12
8
4
0
5
4
3
2
10
0
-2
COLLECTOR-EMITTER VOLTAGE, V
I
R
T
400V
V
f = 1MHz
T
C
j
L
GE
C
= 25C
= 300A
COLLECTOR-EMITTER VOLTAGE
= 2Ω
= 25°C
GATE-EMITTER VOLTAGE VS.
200V
500
= 0V
10
600V
GATE CHARGE, Q
-1
CAPACITANCE VS.
GATE CHARGE
V
1000
CE
(TYPICAL)
(TYPICAL)
= 0V
10
0
1500
G
, (nC)
10
CE
2000
C
C
C
1
, (VOLTS)
res
ies
oes
2500
10
2
5/05