MMBT2222A-TP Micro Commercial Components (MCC), MMBT2222A-TP Datasheet - Page 2

• Manufacturer Part Number: MMBT2222A-TP
• Description: 40V, 600mA, 350mW NPN Transistor, SOT-23 / 7" REEL
• Manufacturer: Micro Commercial Components (MCC)
• Type: Amplifier, Small Signalr

Specifications of MMBT2222A-TP

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Current, Collector: 600 mA
• Current, Gain: 75
• Frequency: 300 MHz
• Package Type: SOT-23
• Polarity: NPN
• Power Dissipation: 350 mW
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 75 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: MMBT2222ATPMSTR

•
•
Features
•
•
•
Micro Commercial Components
Electrical Characteristics @ 25°C Unless Otherwise Specified
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V
V
V
I
I
h
V
V
f
C
C
NF
t
t
t
t
BL
CEX
d
r
s
f
T
Symbol
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
Marking:1P
obo
ibo
Surface Mount SOT-23 Package
Capable of 350mWatts of Power Dissipation, I
Operating Junction Temperature:
Storage Temperature: -55°C to +150°C
Classificatio Rating 94-0 and MSL Rating 1
Case Material:Molded Plastic. UL Flammability
M C C
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain*
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
(V
(I
f=1.0kHz)
Base-Emitter Saturation Voltage
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
C
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
BE
=100µAdc, V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
=10µAdc, I
CE
CE
CB
=0.5Vdc, I
=10mAdc, I
=10µAdc, I
=0.1mAdc, V
=1.0mAdc, V
=10mAdc, V
=150mAdc, V
=150mAdc, V
=500mAdc, V
=150mAdc, I
=500mAdc, I
=150mAdc, I
=500mAdc, I
=20mAdc, V
=60Vdc, V
=60Vdc, V
=10Vdec, I
C
Parameter
E
C
=0, f=1.0MHz)
CE
B
=0)
=0)
=0)
BE
BE
CE
E
B
B
B
B
CE
CE
CE
=10Vdc, R
CE
CE
CE
=0, f=1.0MHz)
=15mAdc)
=50mAdc)
=15mAdc)
=50mAdc)
(V
I
(V
I
=3.0Vdc)
=3.0Vdc)
=20Vdc, f=100MHz)
C
B1
=10Vdc)
=10Vdc)
=10Vdc)
=150mAdc, I
=10Vdc)
=1.0Vdc)
=10Vdc)
CC
CC
=I
=30Vdc, V
=30Vdc, I
B2
=15mAdc)
TM
S
=1.0kΩ
-55°C to +150°C
C
B1
BE
=150mAdc
=15mAdc)
=0.5Vdc
Min
100
6.0
0.6
300
C
40
75
35
50
75
50
40
=600mA
Max
300
225
0.3
1.0
1.2
2.0
8.0
4.0
20
10
10
25
60
25
1 of 4
Units
nAdc
nAdc
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
dB
ns
pF
pF
ns
ns
ns
G
DIM
A
B
C
D
E
G
H
K
F
J
Purpose Amplifier
F
K
INCHES
MMBT2222A
.0005
MIN
.110
.083
.047
.035
.070
.018
.035
.003
.015
.035
.900
NPN General
A
E
.037
.950
Suggested Solder
D
.031
.800
SOT-23
.0039
MAX
.120
.098
.055
.041
.081
.024
.044
.007
.020
Pad Layout
DIMENSIONS
.950
.037
H
C
B
2.80
2.10
1.20
1.78
.013
.085
MIN
.89
.45
.89
.37
MM
.079
2.000
J
B
MAX
3.04
2.64
1.40
1.03
2.05
.100
1.12
.180
.60
.51
C
inches
mm
NOTE
E