MSRT20080(A) GeneSiC Semiconductor, MSRT20080(A) Datasheet
MSRT20080(A)
Manufacturer Part Number
MSRT20080(A)
Description
Standard Recovery - 800 V - 200 A - Three Tower
Manufacturer
GeneSiC Semiconductor
Datasheet
1.MSRT20060A.pdf
(2 pages)
Specifications of MSRT20080(A)
Product
Standard Recovery Rectifier
Reverse Voltage
800 V
Forward Voltage Drop
1.2 V
Forward Continuous Current
200 A
Max Surge Current
3000 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
Module
Lead Free Status / Rohs Status
Details
www.genesicsemi.com
Features
• High Surge Capability
• Types up to 1600 V V
Maximum ratings, at T
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
Silicon Standard
Recovery Diode
p
Parameter
p
RRM
j
= 25 °C, unless otherwise specified
g
Symbol
Symbol
V
V
R
I
V
T
F,SM
V
RRM
RMS
I
T
I
thJC
DC
stg
F
R
F
j
V
T
V
I
R
C
F
R
= 600 V, T
= 25 °C, t
= 200 A, T
= 600 V, T
Conditions
T
Conditions
C
≤ 140 °C
p
j
j
= 8.3 ms
j
= 150 °C
= 25 °C
= 25 °C
MSRT20060(A) thru MSRT200100(A)
1
MSRT20060(A)
MSRT20060(A)
-40 to 175
-40 to 175
3000
0.18
600
424
600
200
1.2
10
5
MSRT20080(A)
MSRT20080(A)
-40 to 175
-40 to 175
3000
0.18
800
566
800
200
1.2
10
5
V
I
F
RRM
= 200 A
Three Tower Package
= 600 V - 1600 V
MSRT200100(A)
MSRT200100(A)
-40 to 175
-40 to 175
1000
1000
3000
0.18
707
200
1.2
10
5
°C/W
Unit
Unit
mA
μA
°C
°C
V
V
V
A
A
V
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MSRT20080(A) Summary of contents
Page 1
... V = 600 V - 1600 V RRM I = 200 A F Three Tower Package MSRT20080(A) MSRT200100(A) 600 800 424 566 600 800 200 200 3000 3000 -40 to 175 -40 to 175 MSRT20080(A) MSRT200100(A) 1.2 1 0.18 0.18 Unit 1000 V 707 V 1000 V 200 A 3000 A -40 to 175 °C -40 to 175 ° ...
Page 2
MSRT20060(A) thru MSRT200100(A) 2 ...