MUN5237DW1T1G ON Semiconductor, MUN5237DW1T1G Datasheet

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MUN5237DW1T1G

Manufacturer Part Number
MUN5237DW1T1G
Description
Pre-Biased "Digital" Transistor,50V V(BR)CEO,100mA I(C),SOT-363
Manufacturer
ON Semiconductor
Datasheets

Specifications of MUN5237DW1T1G

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUN5237DW1T1G
Manufacturer:
ON Semiconductor
Quantity:
500
Part Number:
MUN5237DW1T1G
Manufacturer:
ON
Quantity:
30 000
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1 series,
two BRT devices are housed in the SOT–363 package which is ideal
for low power surface mount applications where board space is at a
premium.
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
(T
January, 2001 – Rev. 3
THERMAL CHARACTERISTICS
A
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25 C
Thermal Resistance –
Total Device Dissipation
Derate above 25 C
Thermal Resistance –
Thermal Resistance –
Junction and Storage Temperature
The BRT (Bias Resistor Transistor) contains a single transistor with
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
Semiconductor Components Industries, LLC, 2001
= 25 C unless otherwise noted, common for Q
T
Junction-to-Ambient
T
Junction-to-Ambient
Junction-to-Lead
A
A
(Both Junctions Heated)
(One Junction Heated)
= 25 C
= 25 C
Characteristic
Characteristic
Rating
Preferred Devices
Symbol
Symbol
Symbol
T
V
V
R
R
R
J
P
P
CBO
CEO
, T
I
C
D
D
JA
JA
JL
stg
1
187 (Note 1.)
256 (Note 2.)
670 (Note 1.)
490 (Note 2.)
250 (Note 1.)
385 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
–55 to +150
and Q
Value
Max
Max
100
50
50
2
)
mW/ C
mW/ C
1
mAdc
Unit
Unit
Unit
Vdc
Vdc
mW
mW
C/W
C/W
C/W
C
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
(4)
(3)
Q
1
MARKING DIAGRAM
http://onsemi.com
7x = Device Marking
R
2
1
=
CASE 419B
SOT–363
2
STYLE 1
(See Page 2)
(5)
R
3
7x
1
Publication Order Number:
R
(2)
1
6
5
4
MUN5211DW1T1/D
R
2
(1)
Q
(6)
2

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