SEMIX151GAL12E4S SEMIKRON, SEMIX151GAL12E4S Datasheet

no-image

SEMIX151GAL12E4S

Manufacturer Part Number
SEMIX151GAL12E4S
Description
IGBT 4 (Trench)
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMIX151GAL12E4S

Family/system
SEMiX
Voltage (v)
1200
Current (a)
150
Chip-type
IGBT 4 (Trench)
Case
SEMiX 1s
SEMiX151GAL12E4s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
© by SEMIKRON
SEMiX
coefficient
max.
T
j
CE(sat)
=150°C
with positive temperature
®
1s
GAL
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Freewheeling diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
F
Fnom
FRM
FSM
t(RMS)
CE
CES
j
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
ies
oes
res
Gint
G
Rev. 0 – 05.05.2010
T
V
V
V
T
t
T
t
I
V
chiplevel
V
V
V
V
V
V
T
Conditions
I
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
p
p
C
CRM
FRM
FRM
j
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
GE
= 10 ms, sin 180°, T
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 175 °C
= 150 A
= 25 °C
=V
= 1200 V
= 25 V
= 800 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 3xI
= 3xI
= 3xI
≤ 1200 V
CE
, I
Fnom
Fnom
Cnom
C
= 6 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
c
c
j
c
c
c
c
j
j
j
j
j
j
j
j
= 150 °C
j
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
4000
typ.
10.0
0.58
0.51
5.00
232
179
150
450
189
141
150
450
900
189
141
150
450
900
600
850
1.8
2.2
0.8
0.7
6.7
5.8
0.1
9.3
10
max.
2.05
10.7
2.4
0.9
0.8
7.7
6.5
0.3
Unit
Unit
mΩ
mΩ
mA
mA
nC
°C
°C
°C
°C
nF
nF
nF
µs
V
A
A
A
A
V
A
A
A
A
A
A
A
A
A
A
A
V
V
V
V
V
V
1

Related parts for SEMIX151GAL12E4S

SEMIX151GAL12E4S Summary of contents

Page 1

... SEMiX151GAL12E4s ® SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125° ...

Page 2

... SEMiX151GAL12E4s ® SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125° ...

Page 3

... SEMiX151GAL12E4s Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 05.05.2010 = ...

Page 4

... SEMiX151GAL12E4s Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 0 – 05.05.2010 ...

Page 5

... SEMiX151GAL12E4s SEMiX 1s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...

Related keywords