SEMIX151GB12E4S SEMIKRON, SEMIX151GB12E4S Datasheet - Page 4
SEMIX151GB12E4S
Manufacturer Part Number
SEMIX151GB12E4S
Description
IGBT 4 (Trench)
Manufacturer
SEMIKRON
Datasheet
1.SEMIX151GB12E4S.pdf
(5 pages)
Specifications of SEMIX151GB12E4S
Family/system
SEMiX
Voltage (v)
1200
Current (a)
150
Chip-type
IGBT 4 (Trench)
Case
SEMiX 1s
SEMiX151GB12E4s
4
Fig. 7: Typ. switching times vs. I
Fig. 9: Typ. transient thermal impedance
Fig. 11: Typ. CAL diode peak reverse recovery current
C
Rev. 0 – 05.05.2010
Fig. 8: Typ. switching times vs. gate resistor R
Fig. 10: Typ. CAL diode forward charact., incl. R
Fig. 12: Typ. CAL diode recovery charge
© by SEMIKRON
G
CC'+EE'