SI1406DH-T1-E3 Vishay, SI1406DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1406DH-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.1A I(D),SOT-363
• Manufacturer: Vishay

Specifications of SI1406DH-T1-E3

• Rohs Compliant: YES
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70684
S-50366—Rev. B, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
0.1
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 3.9 A
0.2
On-Resistance vs. Drain Current
= 10 V
1
2
V
V
SD
T
Q
GS
J
g
= 150_C
− Source-to-Drain Voltage (V)
= 1.8 V
I
0.4
− Total Gate Charge (nC)
D
2
− Drain Current (A)
Gate Charge
4
0.6
3
6
T
0.8
J
4
= 25_C
V
V
GS
GS
= 2.5 V
= 4.5 V
8
1.0
5
1.2
10
6
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
On-Resistance vs. Junction Temperature
C
D
V
I
−25
rss
D
= 2 A
GS
= 3.9 A
= 4.5 V
1
4
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
I
Capacitance
D
2
8
= 3.9 A
C
Vishay Siliconix
50
oss
12
3
75
Si1406DH
C
iss
100
16
www.vishay.com
4
125
150
20
5
3